PN8192 Chipown www.chipown.com Wuxi Xinpeng Rev.1.1 1/9 Microelectronics Co., Ltd AC 85~265V Snubber DC Output SW FB VDD GND High Performance and Low Power AC/DC Converter Overview The PN8192 integrates a PFM controller and 750 V high-reliability MOSFETs for high performance, reduced peripheral components, and low power AC-DC converter power supplies. PN8192 has a built-in 750V high-voltage start-up and self-powered module to realize the functions of rapid start-up, ultra-low standby and self-powered system. At the same time, the chip provides complete intelligent protection functions, including over-current protection, overload protection, under-voltage protection, over-temperature protection and so on. In addition, the frequency reduction modulation technology of PN8192 helps to improve the EMI characteristics. Package/Ordering Information DIP7 VDD FB Characteristic Built-in 750V high reliability MOSFET Built-in high-voltage starting and self-powered circuit For flyback isolation architecture No loop compensation required Dual winding structure, no need for VDD auxiliary power supply Enclosed Steady-State Output 5.5 W @ 230VAC Superior load regulation and efficiency Frequency Reduction Modulation Technique for Improving EMI Comprehensive protection features Overcurrent protection (OCP) VDD Undervoltage Protection (UVP) Overload Protection (OLP) Over-temperature protection (OTP) Field of application Home appliances LED lighting Industrial Control Typical circuit GND GND GND GND SW Order code Enca psul atio n PN8192NSC-T1 DIP7
PN8192 Chipown www.chipown.com Wuxi Xinpeng Rev.1.1 2/9 Microelectronics Co., Ltd Gate Driver Logic Pin definition Pin name Pin number Pin function description GND 1,2,6,7 Ground VDD 3 Chip power pin FB 4 Feedback pin SW 5 High pressure foot Typical power Product model Input voltage Steadystate power (1) Peak Power(2) PN8192 230VAC 5.5W 9W 85-265VAC 4.5W 7.5W Remark 1. Steady-state power is tested in an enclosed 50 ° C environment (flyback application, without auxiliary winding supply) for more than 2 hours. 2. Peak power is tested in an enclosed 50 ° C environment (flyback application) for more than 1 min. Functional block diagram PN8192 VDD 3 6.8V Supply &UVLO HV Startup 5 SW FB 4 COMP Rg REF Ilimit OCP REF 1/2/6/7 GND OTP
PN8192 Chipown www.chipown.com Wuxi Xinpeng Rev.1.1 3/9 Microelectronics Co., Ltd Extreme operating range VDD, FB pin withstand voltage....................... ~9V SW pin withstand voltage.................................. ~750V Junction operating temperature range …- 40~150°C Storage temperature range...................….-55~150°C Pin soldering temperature (10 seconds) .......260°C Package thermal resistance, θJC (DIP7) ..16°C/W Human body mode ESD capability(1)(HBM)........... ±3kV Drain pulse current (Tpulse = 100us) .............. 1.5A Remark 1. Products are entrusted to a third party in strict accordance with the chip level The test shall be conducted according to the test methods and procedures specified in the ESD standard (ANSI/ESDA/JEDEC JS-001-2017). Electrical characteristics (TA = 25 ° C, VDD = 6 V, unless otherwise noted.) Param eter Symbol Condi tion Minimum value Typical value Maximum value Unit Power part Power tube withstand voltage BVDSS ISW=250uA, TJ=25°C 750 800 900 V Off-state leakage current IOFF Vsw =700V, TJ =25°C 1 5 10 uA On resistance RDS(on) ISW=300mA, TJ =25°C 15.7 21 26.3 Ω ISW=300mA, TJ =125°C 31.4 42 52.6 Ω VDD voltage section VDD Start Threshold Voltage VDDon VFB =1V 5.4 5.6 6.2 V VDD off threshold voltage VDDoff VFB =1V 4.9 5.3 5.8 V VDD return difference VDDhys VDDon- VDDoff 0.1 0.3 0.5 V VDD clamp protection voltage VDDclamp IDD=2mA 6.0 6.6 7.6 V VDD Undervoltage Protection Voltage VDDUVP VFB =1V 4.2 4.4 4.6 V VDD Current Section Starting tube charging current 0 IDDch0 VDD=0V,VFB =1V -6 -4.5 -3 mA Starting tube charging current 1 IDDch1 VDD=4V,VFB =1V -6 -2.5 -1.5 mA Quiescent current IDD0 VDD=4V 60 150 250 µA Operating current IDD1 VDD=5V,VFB =4V 150 200 300 µA Internal current sensing Peak current limit Ilimit VDD=6V,VFB =3V 270 310 340 mA Peak current limit SCP Guaranteed by design 1.3×Ilimit 1.4×Ilimit 1.5×Ilimit mA Overcurrent detection leading edge blanking Time TLEB Guaranteed by design 320 ns
PN8192 Chipown www.chipown.com Wuxi Xinpeng Rev.1.1 4/9 Microelectronics Co., Ltd Electrical Characteristics (continued) (TA = 25o C, VDD = 6 V, unless otherwise noted.) Para mete r Symbol Cond itio n Minimu m value Typica l value Maximu m value Unit Feedback input Maximum operating frequency fosc VFB =3V, VDD=5V 110 125 148 kHz Maximum duty cycle Dmax VFB =3V, VDD=5V 60 67 75 % MOS turn-on feedback reference current Press VREF 3.3 3.5 3.7 V OLP trigger feedback reference voltage VREF_OLP 2.3 2.5 2.7 V OLP trigger delay times TOLP Guaranteed by design 96 128 160 ms Abnormal restart time Trestart Guaranteed by design 0.8 1.2 1.6 s Over-temperature protection part Over-temperature protection temperature TSD Guaranteed by design 135 150 165 °C Hysteresis temperature of overtemperature protection THYST Guaranteed by design 30 °C
PN8192 Chipown www.chipown.com Wuxi Xinpeng Rev.1.1 5/9 Microelectronics Co., Ltd Characteristic curve 1000 100 80 900 60 800 40 700 20 600 -50 -25 0 25 50 75 100 125 150 Junction Temperture(℃) (a) BVdss VS Tj 150 0 -50 -25 0 25 50 75 100 125 150 Junction Temperture(℃) (b) RDS(on) VS Tj 340 140 330 130 120 110 320 310 300 100 -50 -25 0 25 50 75 100 125 150 Junction Temperture(℃) (c) fOSC VS Tj 290 -50 -25 0 25 50 75 100 125 150 Junction Temperture(℃) (d) Ilimit VS Tj fOSC(kHz) BVdss (V) I (mA) limit R (Ω) DS(ON)
PN8192 Chipown www.chipown.com Wuxi Xinpeng Rev.1.1 6/9 Microelectronics Co., Ltd Functional description The PN8192 integrates a PFM controller and 750 V high avalanche capability smart power MOSFETs for high performance, reduced peripheral components, and low power AC/DC conversion power supplies. PN8192 is equipped with built-in high-voltage startup and selfpowered module to realize quick startup, ultra-low standby and self-powered functions of the system. The chip provides a complete set of intelligent protection functions, including over-current protection, overload protection, under-voltage protection, over-temperature protection and so on. In addition, the frequency reduction modulation technology of PN8192 helps to improve the EMI characteristics. 1. High voltage start In the starting stage, the internal high-voltage starting tube provides 4ma current to charge the external VDD capacitor; when When the VDD voltage reaches VDDon, the chip starts to work, and the highvoltage starting tube stops charging the VDD capacitor; When the VDD voltage is reduced to VDDoff, the chip continues to work, and the internal high-voltage start tube provides 4ma current again to charge the external VDD capacitor, thereby realizing chip self-power supply ? No auxiliary windings or other peripheral components are required to power the chip. The chip can also adopt an auxiliary winding or an output end auxiliary VDD power supply mode to improve the working efficiency of the chip. A reasonable auxiliary supply voltage should be above the upper limit of VDDoff and below VDDclamp. 2. Constant voltage operating mode When the FB voltage is lower than the internal reference voltage, the chip turns on the integrated high-voltage power tube to charge the energy storage inductor, and when the inductor current reaches the internal reference current IPEAK, the chip turns off the integrated high-voltage power tube. 3. Soft start In order to avoid the large current spike caused by the deep CCM mode in the system startup phase. PN8192 is provided with a soft start function, which is divided into 16 stages in total, and the Ipeak of each stage is 3/18, 4/18 of Ilimit respectively. , 17/18, 18/18, and each step lasts about 1.6 ms. At the same time, in order to avoid entering the deep CCM at the beginning of the start, the maximum operating frequency of the first two steps of the soft start is limited to 1/3 * fmax. If the output voltage reaches the system design value before the end of soft start, the chip adjusts Ipeak and operating frequency according to PFM modulation. 4. Intelligent protection The PN8192 integrates a comprehensive set of protection functions, including overload protection, overcurrent protection, overtemperature protection, and VDD undervoltage protection with a self-recovery mode. Overload protection When the FB detects that the voltage is below the VREF _ OLP, And that duration exceed TOLP, the overload protection is triggered, and the chip is restar. Overcurrent protection Abnormal inductance or short circuit of freewheeling diode And so on, Id may be much larger than Ilimit. When Id > 1.4 * Ilimit (typ) occurs for three consecutive cycles, the chip triggers the overcurrent protection and the chip restarts. Over-temperature protection When the junction temperature of the chip exceeds TSD, the chip enters Temperature protection state, the output is turned off when the die junction temperature is lower than THYST, the chip is back to work. VDD undervoltage protection -- When the chip VDD voltage is lower than VDDUVP for some unexpected reason, in order to prevent chip damage, the chip temporarily turns off the power transistor to reduce the VDD loss. At this time, the high-voltage startup circuit of the chip is in a charging state, and if the VDD voltage rises, the chip automatically exits protection.
PN8192 Chipown www.chipown.com Wuxi Xinpeng Rev.1.1 7/9 Microelectronics Co., Ltd Typical application circuit Peripheral parameter selection and layout reference For better PN8192 system performance, it is important to observe the following rules: 1.Place the VDD capacitor, C1, as close as possible to the VDD and GND pins. Vout GND U1 PN8192 C1 L N GND GND VDD FB GND GND SW
PN8192 Chipown www.chipown.com Wuxi Xinpeng Rev.1.1 8/9 Microelectronics Co., Ltd Encapsulate information Package outline dimensions DIP7 Size Symbol Minimal （mm） Standar d （mm） Max （mm） Size Symbol Minimal （mm） Standar d （mm） Max （mm） A 3.60 3.80 4.00 c 1 0.24 0.25 0.26 A1 0.51 0.55 1 D 9.05 9.25 9.45 A2 3.00 3.30 3.40 E1 6.15 6.35 6.55 A3 1.55 1.60 1.65 e 2.4 2.54BSC 2.7 b 0.38 0.48 0.56 eA 7.62BSC b 1 0.43 0.46 0.48 eB 7.62 — 9.30 B1 1.35 1.52BSC 1.65 eC 0 — 0.84 c 0.24 0.28 0.32 L 3.00 3.35 4 Screen printing on the surface layer Enca psul atio n PN PN8192 YWWXXXXX DIP7 Note: Y: year code; WW: week code; XXXXX: Internal code Remark 1. This drawing may be adjusted without notice; 2. The dimensions of the device body do not include die flash.
PN8192 Chipown www.chipown.com Wuxi Xinpeng Rev.1.1 9/9 Microelectronics Co., Ltd Important statement Wuxi Xinpeng Microelectronics Co., Ltd. reserves the right to change the specifications without prior notice. Wuxi Simpen Microelectronics Co., Ltd. assumes no responsibility for any use of its products for special purposes, and Wuxi Simpen Microelectronics Co., Ltd. has no obligation to provide use and application support for products used for special purposes. Wuxi Xinpeng Microelectronics Co., Ltd. will not transfer its patent license and any other related license rights.