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1/5 DA108S1 ® DA112S1 ARRAY OF 8 OR 12 DIODES SO-8 LOW INPUT CAPACITANCE SUITABLE FOR DIGITAL LINE PROTECTION FEATURES ARRAY of 8 or 12 diodes configured by cells of 2

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Published by , 2016-03-07 04:21:03

A.S.D.TM DIODE ARRAY - Digi-Key

1/5 DA108S1 ® DA112S1 ARRAY OF 8 OR 12 DIODES SO-8 LOW INPUT CAPACITANCE SUITABLE FOR DIGITAL LINE PROTECTION FEATURES ARRAY of 8 or 12 diodes configured by cells of 2

® DA108S1
DA112S1
Application Specific Discretes
A.S.D.TM DIODE ARRAY

APPLICATION

Protection of logic side of ISDN S-interface.
Protection of I/O lines of microcontroller.
Signal conditioning.

FEATURES SO-8
FUNCTIONAL DIAGRAM : DA108S1
s ARRAY OF 8 OR 12 DIODES
s LOW INPUT CAPACITANCE
s SUITABLE FOR DIGITAL LINE PROTECTION

DESCRIPTION I/O 1 1 8 REF 1
ARRAY of 8 or 12 diodes configured by cells of 2 I/O 2 2 7 REF 1
diodes, each cell being used to protect signal line I/O 3 3 6 REF 2
from transient overvoltages by clamping action. I/O 4 4 5 REF 2

COMPLIES WITH FOLLOWING STANDARDS :
IEC1000-4-22 level 4: 15kV (air discharge)

8kV (contact discharge)

FUNCTIONAL DIAGRAM : DA112S1

I/O 1 1 8 REF 1
I/O 2 2 7 I/O 6
I/O 3 3 6 REF 2
I/O 4 4 5 I/O 5

August 2001 - Ed:4 1/5

DA108S1 / DA112S1

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)

Symbol Parameter Value Unit
18 V
VRRM Repetitive peak reverse voltage (for one single diode) 12 A
IPP 0.73 W
P Repetitive peak forward current * 8/20 µs °C
- 55 to + 150
Power dissipation 150 °C
260
Tstg Storage temperature range
Tj Maximum operating junction temperature

TL Maximum lead temperature for soldering during 10s.

* The surge is repeated after the device returns to ambient temperature

THERMAL RESISTANCES Parameter Value Unit
Symbol 170 °C/W

Rth (j-a) Junction to ambient

ELECTRICAL CHARACTERISTICS (Tamb = 25°C)

Symbol Parameter Max. Unit
V
VFP Peak forward voltage IPP = 12A, 8/20 µs DA108S1 9
12 V
DA112S1 µA
1.2
VF Forward voltage IF = 50 mA
2
IR Reverse leakage current VR = 15V

2/5

DA108S1 / DA112S1

Fig.1 : Input capacitance

VCC connected between REF1 and REF2 36 C (pF)

Input applied : Typical values

DC bias + 950 mV(RMS) at 1 MHZ 34 VCC = 5 V
VCC = 15 V
32
REF2 30

28

I/O VCC 26

G 24

REF1 22
0 2 4 6 8 10 12 14 16
DC bias (V)

Fig.2 : Typical peak forward voltage characteristics (8/20µs pulse)

VF(V) Typical values VF (V) Typical values
2.0 10.0
Tj = 25 oC
1.8 Tj = 25 o C 9.0
1.6 8.0 I F (A)
7.0
1.4 6.0
5.0
1.2 4.0
3.0
1.0 2.0
1.0
0.8 0.0
11
0.6

0.4

0.2

0.0 0.01 0.1 10 20
0.001

IF(A)

3/5

DA108S1 / DA112S1

APPLICATION 1 : ISDN Interface Protection
Residual lightning surges at transformer secondary are suppressed by DA108S1

APPLICATION 2 : Microcontroller I/O port protection Vcc
µc
Vcc

4-6 bit input port

I/O
Vcc

I/O
Vcc

I/O
Vcc

I/O

DA1xx S1
IMPORTANT : DA108S1 must imperatively be connected to the reference voltages by REF1 and REF2.

4/5

DA108S1 / DA112S1

ORDER CODE

DA1 08 S 1 RL

Diode Array Packaging:
RL = Tape & reel

= Tube

Number of diodes Package: SO-8 plastic

MARKING : Logo, Data Code, Serial

DA108S1 DA108S Packaging : Preference packaging is tape and reel.

DA112S1 DA112S

PACKAGE MECHANICAL DATA
SO-8 (Plastic)

DIMENSIONS

REF. Millimetres Inches

A Min. Typ. Max. Min. Typ. Max.
a1
a2 1.75 0.069
b
b1 0.1 0.25 0.004 0.010
C
c1 1.65 0.065
D
E 0.35 0.48 0.014 0.019
e
e3 0.19 0.25 0.007 0.010
F
L 0.50 0.020
M
S 45° (typ)

4.8 5.0 0.189 0.197

5.8 6.2 0.228 0.244

1.27 0.050

3.81 0.150

3.8 4.0 0.15 0.157

0.4 1.27 0.016 0.050

0.6 0.024

8° (max)

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

© 2001 STMicroelectronics - Printed in Italy - All rights reserved.

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5/5


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